Faculty Directory

Education

Ph.D.	Electrical Engineering, Case Western Reserve University, Ohio, USA (2016)
B.E.	Electrical Engineering, Tianjin University, Tianjin, China (2011)

Work Experience

2022 – pres.	Associate Professor of Electrical Engineering, UM-SJTU Joint Institute, Shanghai Jiao Tong University
2018 – 2022	Assistant Professor of Electrical Engineering, UM-SJTU Joint Institute, Shanghai Jiao Tong University
2016 – 2018	Postdoctoral Scholar, Electrical Engineering, Stanford University

Honors and Awards

• 2019Forbes China “30 Under 30” Awardin Science Category (one of the 30 awardees in China).
• 2019“Rising Star Junior Faculty Award”(one of the 10 awardees in China), Organized by China Association for Science and Technology.
• “Young Scientist Award”in Microsystems & Nanoengineering Summit 2019 (MINE’2019, one of the 6 awardees in China).
• Shanghai Yang Fan Talent Program, Science and Technology Commission of Shanghai Municipality (2019)
• Ruth Barber Moon Award, Case Western Reserve University (2015)

Research Interests

• In-memory computing using resistive random-access memories (RRAMs)
• Resonant nanoelectromechanical systems (NEMS) for sensing, computing, and RF signal processing
• Flexible electronic devices based on 2D materials

Selected Publications

(†Equal Contribution, *Corresponding Author)

• Xu, P. Zhang, J. Zhu, Z. Liu, A. Eichler, X.-Q. Zheng, J. Lee, A. Dash, S. More, S. Wu, Y. Wang, H. Jia, A. Naik*, A. Bachtold,R. Yang*, P. X.-L. Feng*, Z. Wang*, “Nanomechanical Resonators: Toward Atomic Scale”,ACS Nano16, 15545–15585 (2022).
• R. Yang*, S M E. H. Yousuf, J. Lee, P. Zhang, Z. Liu, P. X.-L. Feng*, “Raman Spectroscopic Probe for Nonlinear MoS₂Nanoelectromechanical Resonators”,Nano Letters22, 5780-5787 (2022).
• Zhang, Y. Jia, M. Xie, Z. Liu, S. Shen, J. Wei,R. Yang*, “Strain-Modulated Dissipation in Two-Dimensional Molybdenum Disulfide Nanoelectromechanical Resonators”,ACS Nano16, 2261-2270 (2022)
• R. Yang, “In-Memory Computing with Ferroelectrics”,Nature Electronics3, 237–238 (2020). (Invited News & Views Article)
• I. Evans†,R. Yang†, L. T. Gan†, M. Abbasi, X. Wang, R. Traylor, J. A. Fan, D. Natelson, “Thermoelectric Response from Grain Boundaries and Lattice Distortions in Crystalline Gold Devices”,Proceedings of the National Academy of Sciences of the United States of America (PNAS)117, 23350-23355 (2020).
• R. Yang*, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “Ternary Content-Addressable Memory with MoS₂Transistors for Massively Parallel Data Search”,Nature Electronics2, 108-114 (2019).
• T. Gan†,R. Yang†, R. Traylor, W. Cai, W. D. Nix, J. A. Fan, “High-Throughput Growth of Microscale Gold Bicrystals for Single-Grain-Boundary Studies”,Advanced Materials, 1902189 (2019). DOI: 10.1002/adma.201902189.
• R. Yang, J. Lee, S. Ghosh, H. Tang, R. M. Sankaran, C. A. Zorman, P. X.-L. Feng, “Tuning Optical Signatures of Single-and Few-Layer MoS₂by Blown-Bubble Bulge Straining up to Fracture”,Nano Letters17, 4568-4575 (2017).
• R. Yang, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “2D Molybdenum Disulfide (MoS₂) Transistors Driving RRAMs with 1T1R Configuration”,Int. Electron Devices Meeting (IEDM), 477-480, San Francisco, Dec. 2-6 (2017).Featured byIEEE Spectrum
• R. Yang, C. Chen, J. Lee, D. A. Czaplewski, P. X.-L. Feng, “Local-Gate Electrical Actuation, Detection, and Tuning of Atomic-Layer MoS₂Nanoelectromechanical Resonators”, in30th IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS 2017), 163-166, Las Vegas, Jan. 22-26 (2017) (+talk, selection rate 10%).
• R. Yang, A. Islam, P. X.-L. Feng, “Electromechanical Coupling and Design Considerations in Single-Layer MoS₂Suspended-Channel Transistors and Resonators”,Nanoscale7, 19921-19929 (2015).
• R. Yang, T. He, M. A. Tupta, C. Marcoux, P. Andreucci, L. Duraffourg, P. X.-L. Feng, “Probing Contact-Mode Characteristics of Silicon Nanowire Electromechanical Systems with Embedded Piezoresistive Transducers”,Journal of Micromechanics and Microengineering25, 095014 (2015).Featured as Cover Article
• R. Yang†, X. Zheng†, Z. Wang, P. X.-L. Feng, “Multilayer MoS₂Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing”,Journal of Vacuum Science and Technology B32, 061203 (2014). †Equal Contribution.Featured as Cover Article, Editor’s Pick and Most Read Article

Professional Service

• Editorial Board Member of Journal:Microsystems & Nanoengineering
• Reviews Editor of Journal:Nanotechnology
• Associate Editor of Journal:Micro & Nano Letters
• Invited speaker in a number of conferences, includingIEEE NEMS 2021, ICON-2DMAT 2019, CSMNT 2019, ICMAN 2018, IEMS-2018, The Second Symposium on Advanced 2D Materials and Devices,and multiple university seminars.